Name: GeneSiC Semiconductor 2N7635-GA
Brand: GeneSiC Semiconductor
SKU: 2N7635-GA
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Obsolete
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	415mOhm @ 4A
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	324 pF @ 35 V
FET Feature	-
Power Dissipation (Max)	47W (Tc)
Operating Temperature	-55°C ~ 225°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-257
Package / Case	TO-257-3

Product Description

The GeneSiC Semiconductor 2N7635-GA is a TRANS SJT 650V 4A TO257. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine GeneSiC Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the GeneSiC Semiconductor 2N7635-GA for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.