Name: GeneSiC Semiconductor G3R350MT12D
Brand: GeneSiC Semiconductor
SKU: G3R350MT12D
Price: 4.86000 USD
Availability: InStock

Technical Specifications

Series	G3R™
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	74W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

Product Description

The GeneSiC Semiconductor G3R350MT12D is a SIC MOSFET N-CH 11A TO247-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine GeneSiC Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the GeneSiC Semiconductor G3R350MT12D for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.