Name: GeneSiC Semiconductor GA10SICP12-263
Brand: GeneSiC Semiconductor
SKU: GA10SICP12-263
Price: 29.67690 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	100mOhm @ 10A
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1403 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (7-Lead)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Product Description

The GeneSiC Semiconductor GA10SICP12-263 is a TRANS SJT 1200V 25A D2PAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine GeneSiC Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Surface Mount

Whether you need the GeneSiC Semiconductor GA10SICP12-263 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.