SemiQ GPA015A120MN-ND

IGBT 1200V 30A 212W TO3PN

In Stock: 14,169 Genuine Part Fast Shipping
SemiQ GPA015A120MN-ND
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Key Specifications

Series -
Package Tube
Part Status Obsolete
IGBT Type NPT and Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 45 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A

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Technical Specifications

Series -
Package Tube
Part Status Obsolete
IGBT Type NPT and Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 45 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
Power - Max 212 W
Switching Energy 1.61mJ (on), 530µJ (off)
Input Type Standard
Gate Charge 210 nC
Td (on/off) @ 25°C 25ns/166ns
Test Condition 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr) 320 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN

Product Description

The SemiQ GPA015A120MN-ND is a IGBT 1200V 30A 212W TO3PN. This component belongs to the Transistors - IGBTs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine SemiQ components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the SemiQ GPA015A120MN-ND for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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