Name: IR (Infineon Technologies) BSB104N08NP3GXUSA1
Brand: IR (Infineon Technologies)
SKU: BSB104N08NP3GXUSA1
Price: 0.78768 USD
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON

Product Description

The IR (Infineon Technologies) BSB104N08NP3GXUSA1 is a MOSFET N-CH 80V 13A/50A 2WDSON. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the IR (Infineon Technologies) BSB104N08NP3GXUSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.