Name: IR (Infineon Technologies) BSG0813NDIATMA1
Brand: IR (Infineon Technologies)
SKU: BSG0813NDIATMA1
Price: 1.24740 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tape & Reel (TR)
Part Status	Active
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	19A, 33A
Rds On (Max) @ Id, Vgs	3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 12V
Power - Max	2.5W
Operating Temperature	-55°C ~ 155°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	PG-TISON-8

Product Description

The IR (Infineon Technologies) BSG0813NDIATMA1 is a MOSFET 2N-CH 25V 19A/33A TISON8. This component belongs to the Transistors - FETs, MOSFETs - Arrays category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the IR (Infineon Technologies) BSG0813NDIATMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.