Name: IR (Infineon Technologies) BSM75GD120DN2BOSA1
Brand: IR (Infineon Technologies)
SKU: BSM75GD120DN2BOSA1
Price: 228.29100 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tray
Part Status	Not For New Designs
IGBT Type	-
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	103 A
Power - Max	520 W
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 75A
Current - Collector Cutoff (Max)	1.5 mA
Input Capacitance (Cies) @ Vce	5.1 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Product Description

The IR (Infineon Technologies) BSM75GD120DN2BOSA1 is a IGBT MOD 1200V 103A 520W. This component belongs to the Transistors - IGBTs - Modules category and features Package of Tray, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tray
Mounting Type: Chassis Mount

Whether you need the IR (Infineon Technologies) BSM75GD120DN2BOSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.