Name: IR (Infineon Technologies) DF200R12W1H3B27BOMA1
Brand: IR (Infineon Technologies)
SKU: DF200R12W1H3B27BOMA1
Price: 54.61750 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
IGBT Type	-
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	30 A
Power - Max	375 W
Vce(on) (Max) @ Vge, Ic	1.3V @ 15V, 30A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	2 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Product Description

The IR (Infineon Technologies) DF200R12W1H3B27BOMA1 is a IGBT MOD 1200V 30A 375W. This component belongs to the Transistors - IGBTs - Modules category and features Package of Bulk, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Chassis Mount

Whether you need the IR (Infineon Technologies) DF200R12W1H3B27BOMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.