Name: IR (Infineon Technologies) FF8MR12W2M1B11BOMA1
Brand: IR (Infineon Technologies)
SKU: FF8MR12W2M1B11BOMA1
Price: 248.29000 USD
Availability: InStock

Technical Specifications

Series	CoolSiC™+
Package	Tray
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	150A (Tj)
Rds On (Max) @ Id, Vgs	7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id	5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs	372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	11000pF @ 800V
Power - Max	20mW (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-EASY2BM-2

Product Description

The IR (Infineon Technologies) FF8MR12W2M1B11BOMA1 is a MOSFET 2N-CH 1200V AG-EASY2BM-2. This component belongs to the Transistors - FETs, MOSFETs - Arrays category and features Package of Tray, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tray
Mounting Type: Chassis Mount

Whether you need the IR (Infineon Technologies) FF8MR12W2M1B11BOMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.