Name: IR (Infineon Technologies) FS75R12W2T4B11BOMA1
Brand: IR (Infineon Technologies)
SKU: FS75R12W2T4B11BOMA1
Price: 63.70000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tray
Part Status	Active
IGBT Type	Trench Field Stop
Configuration	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	107 A
Power - Max	375 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 75A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	4.3 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Product Description

The IR (Infineon Technologies) FS75R12W2T4B11BOMA1 is a IGBT MOD 1200V 107A 375W. This component belongs to the Transistors - IGBTs - Modules category and features Package of Tray, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tray
Mounting Type: Chassis Mount

Whether you need the IR (Infineon Technologies) FS75R12W2T4B11BOMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.