Name: IR (Infineon Technologies) IMBG120R350M1HXTMA1
Brand: IR (Infineon Technologies)
SKU: IMBG120R350M1HXTMA1
Price: 8.22000 USD
Availability: InStock

Technical Specifications

Series	CoolSiC™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1.2 kV
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id	5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.9 nC @ 18 V
Vgs (Max)	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds	196 pF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	65W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Product Description

The IR (Infineon Technologies) IMBG120R350M1HXTMA1 is a TRANS SJT N-CH 1.2KV 4.7A TO263. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Mounting Type: Surface Mount

Whether you need the IR (Infineon Technologies) IMBG120R350M1HXTMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.