Name: IR (Infineon Technologies) IMW120R030M1HXKSA1
Brand: IR (Infineon Technologies)
SKU: IMW120R030M1HXKSA1
Price: 22.83000 USD
Availability: InStock

Technical Specifications

Series	CoolSiC™
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1.2 kV
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id	5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	2.12 nF @ 800 V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3

Product Description

The IR (Infineon Technologies) IMW120R030M1HXKSA1 is a SICFET N-CH 1.2KV 56A TO247-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IMW120R030M1HXKSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.