Name: IR (Infineon Technologies) IMW120R350M1HXKSA1
Brand: IR (Infineon Technologies)
SKU: IMW120R350M1HXKSA1
Price: 7.23000 USD
Availability: InStock

Technical Specifications

Series	CoolSiC™
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1.2 kV
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	455mOhm @ 2A, 18V
Vgs(th) (Max) @ Id	5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	182 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3

Product Description

The IR (Infineon Technologies) IMW120R350M1HXKSA1 is a SICFET N-CH 1.2KV 4.7A TO247-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IMW120R350M1HXKSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.