Name: IR (Infineon Technologies) IPAN60R125PFD7SXKSA1
Brand: IR (Infineon Technologies)
SKU: IPAN60R125PFD7SXKSA1
Price: 2.73000 USD
Availability: InStock

Technical Specifications

Series	CoolMOS™PFD7
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1503 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220 Full Pack
Package / Case	TO-220-3 Full Pack

Product Description

The IR (Infineon Technologies) IPAN60R125PFD7SXKSA1 is a MOSFET N-CH 650V 25A TO220. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IPAN60R125PFD7SXKSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.