MOSFET N-CH 600V 19.3A TO220
| Series | CoolMOS™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 19.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $1.0210 |
| 10+ | $0.9031 |
| 450+ | $0.6264 |
| 900+ | $0.4836 |
| 1,350+ | $0.4370 |
| Series | CoolMOS™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 19.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 32W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220 Full Pack, Wide Creepage |
| Package / Case | TO-220-3 Full Pack, Variant |
The IR (Infineon Technologies) IPAW60R280CEXKSA1 is a MOSFET N-CH 600V 19.3A TO220. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.
Whether you need the IR (Infineon Technologies) IPAW60R280CEXKSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.