Name: IR (Infineon Technologies) IPB80N06S2L09ATMA2
Brand: IR (Infineon Technologies)
SKU: IPB80N06S2L09ATMA2
Price: 1.12228 USD
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.2mOhm @ 52A, 10V
Vgs(th) (Max) @ Id	2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2620 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The IR (Infineon Technologies) IPB80N06S2L09ATMA2 is a MOSFET N-CH 55V 80A TO263-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the IR (Infineon Technologies) IPB80N06S2L09ATMA2 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.