Name: IR (Infineon Technologies) IPD12CNE8N G
Brand: IR (Infineon Technologies)
SKU: IPD12CNE8N G
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	85 V
Current - Continuous Drain (Id) @ 25°C	67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4340 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Product Description

The IR (Infineon Technologies) IPD12CNE8N G is a MOSFET N-CH 85V 67A TO252-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the IR (Infineon Technologies) IPD12CNE8N G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.