Name: IR (Infineon Technologies) IPP03N03LA
Brand: IR (Infineon Technologies)
SKU: IPP03N03LA
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Tape & Box (TB)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7027 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

Product Description

The IR (Infineon Technologies) IPP03N03LA is a MOSFET N-CH 25V 80A TO220-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Box (TB), Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Box (TB)
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IPP03N03LA for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.