MOSFET N-CH 700V 31.2A TO220-3
| Series | CoolMOS™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $6.3000 |
| 10+ | $5.6271 |
| 100+ | $4.6144 |
| 500+ | $3.7366 |
| 1,000+ | $3.1513 |
| Series | CoolMOS™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
The IR (Infineon Technologies) IPP65R110CFDXKSA1 is a MOSFET N-CH 700V 31.2A TO220-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.
Whether you need the IR (Infineon Technologies) IPP65R110CFDXKSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.