Name: IR (Infineon Technologies) IPSA70R2K0CEAKMA1
Brand: IR (Infineon Technologies)
SKU: IPSA70R2K0CEAKMA1
Price: 0.28015 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs	7.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	163 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

Product Description

The IR (Infineon Technologies) IPSA70R2K0CEAKMA1 is a MOSFET N-CH 700V 4A TO251-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IPSA70R2K0CEAKMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.