Name: IR (Infineon Technologies) IRF1902GPBF
Brand: IR (Infineon Technologies)
SKU: IRF1902GPBF
Availability: InStock

Technical Specifications

Series	HEXFET®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	310 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

Product Description

The IR (Infineon Technologies) IRF1902GPBF is a MOSFET N-CH 20V 4.2A 8SO. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Surface Mount

Whether you need the IR (Infineon Technologies) IRF1902GPBF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.