Name: IR (Infineon Technologies) IRFB812PBF
Brand: IR (Infineon Technologies)
SKU: IRFB812PBF
Price: 0.52500 USD
Availability: InStock

Technical Specifications

Series	HEXFET®
Package	Tube
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	810 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

Product Description

The IR (Infineon Technologies) IRFB812PBF is a MOSFET N CH 500V 3.6A TO220AB. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IRFB812PBF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.