Name: IR (Infineon Technologies) IRFU9N20D
Brand: IR (Infineon Technologies)
SKU: IRFU9N20D
Availability: InStock

Technical Specifications

Series	HEXFET®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	560 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	86W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

Product Description

The IR (Infineon Technologies) IRFU9N20D is a MOSFET N-CH 200V 9.4A IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IRFU9N20D for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.