Name: IR (Infineon Technologies) IRLU3636PBF
Brand: IR (Infineon Technologies)
SKU: IRLU3636PBF
Price: 2.01000 USD
Availability: InStock

Technical Specifications

Series	HEXFET®
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 4.5 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3779 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	143W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

Product Description

The IR (Infineon Technologies) IRLU3636PBF is a MOSFET N-CH 60V 50A IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IRLU3636PBF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.