IR (Infineon Technologies) SIDC06D120H8X1SA2

DIODE GEN PURP 1.2KV 7.5A WAFER

In Stock: 13,793 Genuine Part Fast Shipping
IR (Infineon Technologies) SIDC06D120H8X1SA2
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Key Specifications

Series -
Package Bulk
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 7.5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.97 V @ 7.5 A
Speed Standard Recovery >500ns, > 200mA (Io)

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Technical Specifications

Series -
Package Bulk
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 7.5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.97 V @ 7.5 A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 27 µA @ 1200 V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Sawn on foil
Operating Temperature - Junction -40°C ~ 175°C

Product Description

The IR (Infineon Technologies) SIDC06D120H8X1SA2 is a DIODE GEN PURP 1.2KV 7.5A WAFER. This component belongs to the Diodes - Rectifiers - Single category and features Package of Bulk, Mounting Type of Surface Mount, Speed of Standard Recovery >500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk
  • Mounting Type: Surface Mount
  • Speed: Standard Recovery >500ns, > 200mA (Io)

Whether you need the IR (Infineon Technologies) SIDC06D120H8X1SA2 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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