Name: IR (Infineon Technologies) SPD11N10
Brand: IR (Infineon Technologies)
SKU: SPD11N10
Availability: InStock

Technical Specifications

Series	SIPMOS®
Package	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs	18.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	P-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Product Description

The IR (Infineon Technologies) SPD11N10 is a MOSFET N-CH 100V 10.5A TO252-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the IR (Infineon Technologies) SPD11N10 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.