Name: Microsemi APTGFQ25H120T2G
Brand: Microsemi
SKU: APTGFQ25H120T2G
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
IGBT Type	NPT and Fieldstop
Configuration	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	40 A
Power - Max	227 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 25A
Current - Collector Cutoff (Max)	250 µA
Input Capacitance (Cies) @ Vce	2.02 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	SP2
Supplier Device Package	SP2

Product Description

The Microsemi APTGFQ25H120T2G is a IGBT MODULE 1200V 40A 227W SP2. This component belongs to the Transistors - IGBTs - Modules category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Microsemi components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Microsemi APTGFQ25H120T2G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.