Name: Microsemi APTM100DA33T1G
Brand: Microsemi
SKU: APTM100DA33T1G
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	396mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	305 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	7868 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	390W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SP1
Package / Case	SP1

Product Description

The Microsemi APTM100DA33T1G is a MOSFET N-CH 1000V 23A SP1. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine Microsemi components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Chassis Mount

Whether you need the Microsemi APTM100DA33T1G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.