Name: NTE Electronics, Inc. NTE2973
Brand: NTE Electronics, Inc.
SKU: NTE2973
Price: 14.64000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bag
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	850mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2.9 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	275W (Tc)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3

Product Description

The NTE Electronics, Inc. NTE2973 is a MOSFET-N-CHAN ENHANCEMENT TO-3P. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bag, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine NTE Electronics, Inc. components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bag
Mounting Type: Through Hole

Whether you need the NTE Electronics, Inc. NTE2973 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.