Name: NXP Semiconductors BS108/01,126
Brand: NXP Semiconductors
SKU: BS108/01,126
Availability: InStock

Technical Specifications

Series	-
Package	Tape & Box (TB)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.8V
Rds On (Max) @ Id, Vgs	5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id	1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Product Description

The NXP Semiconductors BS108/01,126 is a MOSFET N-CH 200V 300MA TO92-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Box (TB), Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine NXP Semiconductors components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Box (TB)
Mounting Type: Through Hole

Whether you need the NXP Semiconductors BS108/01,126 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.