Name: NXP Semiconductors PHB112N06T,118
Brand: NXP Semiconductors
SKU: PHB112N06T,118
Availability: InStock

Technical Specifications

Series	TrenchMOS™
Package	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4352 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The NXP Semiconductors PHB112N06T,118 is a MOSFET N-CH 55V 75A D2PAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine NXP Semiconductors components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the NXP Semiconductors PHB112N06T,118 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.