Name: NXP Semiconductors PHU11NQ10T,127
Brand: NXP Semiconductors
SKU: PHU11NQ10T,127
Availability: InStock

Technical Specifications

Series	TrenchMOS™
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	57.7W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

Product Description

The NXP Semiconductors PHU11NQ10T,127 is a MOSFET N-CH 100V 10.9A IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine NXP Semiconductors components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the NXP Semiconductors PHU11NQ10T,127 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.