Name: Sanyo Semiconductor/ON Semiconductor FQE10N20LCTU
Brand: Sanyo Semiconductor/ON Semiconductor
SKU: FQE10N20LCTU
Availability: InStock

Technical Specifications

Series	QFET®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	12.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-126-3
Package / Case	TO-225AA, TO-126-3

Product Description

The Sanyo Semiconductor/ON Semiconductor FQE10N20LCTU is a MOSFET N-CH 200V 4A TO126-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Sanyo Semiconductor/ON Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Sanyo Semiconductor/ON Semiconductor FQE10N20LCTU for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.