Name: Rectron USA RMD1N25ES9
Brand: Rectron USA
SKU: RMD1N25ES9
Price: 0.06000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-363
Package / Case	6-TSSOP, SC-88, SOT-363

Product Description

The Rectron USA RMD1N25ES9 is a MOSFET N-CHANNEL 25V 1.1A SOT363. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rectron USA components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the Rectron USA RMD1N25ES9 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.