Name: Renesas Electronics America H7N1002LS-E
Brand: Renesas Electronics America
SKU: H7N1002LS-E
Availability: InStock

Technical Specifications

Series	-
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	75A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9700 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-LDPAK
Package / Case	SC-83

Product Description

The Renesas Electronics America H7N1002LS-E is a MOSFET N-CH 100V 75A 4LDPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Renesas Electronics America components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the Renesas Electronics America H7N1002LS-E for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.