Name: Renesas Electronics America RJK1003DPN-A0#T2
Brand: Renesas Electronics America
SKU: RJK1003DPN-A0#T2
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4150 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	125W (Ta)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220ABA
Package / Case	TO-220-3

Product Description

The Renesas Electronics America RJK1003DPN-A0#T2 is a MOSFET N-CH 100V 50A TO220ABA. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Renesas Electronics America components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Renesas Electronics America RJK1003DPN-A0#T2 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.