Name: Renesas Electronics America RJK2009DPM-00#T0
Brand: Renesas Electronics America
SKU: RJK2009DPM-00#T0
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-3PFM
Package / Case	TO-3PFM, SC-93-3

Product Description

The Renesas Electronics America RJK2009DPM-00#T0 is a MOSFET N-CH 200V 40A TO3PFM. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Renesas Electronics America components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Renesas Electronics America RJK2009DPM-00#T0 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.