Name: Renesas Electronics America RJL6012DPE-00#J3
Brand: Renesas Electronics America
SKU: RJL6012DPE-00#J3
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-LDPAK
Package / Case	SC-83

Product Description

The Renesas Electronics America RJL6012DPE-00#J3 is a MOSFET N-CH 600V 10A 4LDPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Renesas Electronics America components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Surface Mount

Whether you need the Renesas Electronics America RJL6012DPE-00#J3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.