Rochester Electronics 2SC3332S-AA-SA

NPN EPITAXIAL PLANAR SILICON

In Stock: 58,823 Genuine Part Fast Shipping
Rochester Electronics 2SC3332S-AA-SA
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Key Specifications

Series -
Package Bulk
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 700 mA
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max) 100nA (ICBO)

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Technical Specifications

Series -
Package Bulk
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 700 mA
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V
Power - Max 700 mW
Frequency - Transition 120MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package 3-NP

Product Description

The Rochester Electronics 2SC3332S-AA-SA is a NPN EPITAXIAL PLANAR SILICON. This component belongs to the Transistors - Bipolar (BJT) - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk
  • Mounting Type: Through Hole

Whether you need the Rochester Electronics 2SC3332S-AA-SA for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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