Rochester Electronics 2SC3361-6-TB-E

NPN EPITAXIAL PLANAR SILICON

In Stock: 55,555 Genuine Part Fast Shipping
Rochester Electronics 2SC3361-6-TB-E
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Key Specifications

Series *
Package Bulk
Part Status Active
Transistor Type -
Current - Collector (Ic) (Max) -
Voltage - Collector Emitter Breakdown (Max) -
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) -

Pricing

Quantity Unit Price (USD)
1+ $0.1800
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Technical Specifications

Series *
Package Bulk
Part Status Active
Transistor Type -
Current - Collector (Ic) (Max) -
Voltage - Collector Emitter Breakdown (Max) -
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max -
Frequency - Transition -
Operating Temperature -
Mounting Type -
Package / Case -
Supplier Device Package -

Product Description

The Rochester Electronics 2SC3361-6-TB-E is a NPN EPITAXIAL PLANAR SILICON. This component belongs to the Transistors - Bipolar (BJT) - Single category and features Package of Bulk. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk

Whether you need the Rochester Electronics 2SC3361-6-TB-E for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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