Name: Rochester Electronics 2SK4177-DL-1E
Brand: Rochester Electronics
SKU: 2SK4177-DL-1E
Price: 2.03000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1.5 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	37.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The Rochester Electronics 2SK4177-DL-1E is a POWER FIELD-EFFECT TRANSISTOR, 2. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics 2SK4177-DL-1E for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.