Name: Rochester Electronics BMS3003-1E
Brand: Rochester Electronics
SKU: BMS3003-1E
Price: 2.05000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	78A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 39A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	285 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13.2 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F-3SG
Package / Case	TO-220-3 Full Pack

Product Description

The Rochester Electronics BMS3003-1E is a BUFFER/INVERTER BASED MOSFET DRI. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Rochester Electronics BMS3003-1E for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.