Rochester Electronics BSC091N03MSCGATMA1

POWER FIELD-EFFECT TRANSISTOR, 1

In Stock: 40,000 Genuine Part Fast Shipping
Rochester Electronics BSC091N03MSCGATMA1
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Key Specifications

Series *
Package Bulk
Part Status Active
FET Type -
Technology -
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) -

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Quantity Unit Price (USD)
1+ $0.2500
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Technical Specifications

Series *
Package Bulk
Part Status Active
FET Type -
Technology -
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type -
Supplier Device Package -
Package / Case -

Product Description

The Rochester Electronics BSC091N03MSCGATMA1 is a POWER FIELD-EFFECT TRANSISTOR, 1. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk

Whether you need the Rochester Electronics BSC091N03MSCGATMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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