Name: Rochester Electronics BUK652R1-30C,127
Brand: Rochester Electronics
SKU: BUK652R1-30C,127
Price: 0.96000 USD
Availability: InStock

Technical Specifications

Series	TrenchMOS™
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	168 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	10.918 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	263W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

Product Description

The Rochester Electronics BUK652R1-30C,127 is a PFET, 120A I(D), 30V, 0.0035OHM,. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Rochester Electronics BUK652R1-30C,127 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.