Name: Rochester Electronics DF11MR12W1M1B11BOMA1
Brand: Rochester Electronics
SKU: DF11MR12W1M1B11BOMA1
Price: 120.00000 USD
Availability: InStock

Technical Specifications

Series	*
Package	Bulk
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	50A
Rds On (Max) @ Id, Vgs	23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	3950pF @ 800V
Power - Max	20mW
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Product Description

The Rochester Electronics DF11MR12W1M1B11BOMA1 is a IGBT MODULE. This component belongs to the Transistors - FETs, MOSFETs - Arrays category and features Package of Bulk, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Chassis Mount

Whether you need the Rochester Electronics DF11MR12W1M1B11BOMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.