Name: Rochester Electronics FDFM2N111
Brand: Rochester Electronics
SKU: FDFM2N111
Price: 0.36000 USD
Availability: InStock

Technical Specifications

Series	PowerTrench®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	100mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.8 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	273 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.7W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MicroFET 3x3mm
Package / Case	6-WDFN Exposed Pad

Product Description

The Rochester Electronics FDFM2N111 is a MOSFET N-CH 20V 4A MICROFET. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics FDFM2N111 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.