Name: Rochester Electronics FDP2D3N10C
Brand: Rochester Electronics
SKU: FDP2D3N10C
Price: 4.03000 USD
Availability: InStock

Technical Specifications

Series	PowerTrench®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	222A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11.18 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

Product Description

The Rochester Electronics FDP2D3N10C is a MOSFET N-CH 100V 222A TO220-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Rochester Electronics FDP2D3N10C for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.