Name: Rochester Electronics FDZ3N513ZT
Brand: Rochester Electronics
SKU: FDZ3N513ZT
Price: 0.32000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1.1A
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	462mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1 nC @ 4.5 V
Vgs (Max)	+5.5V, -300mV
Input Capacitance (Ciss) (Max) @ Vds	85 pF @ 15 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-WLCSP (1x1)
Package / Case	4-XFBGA, WLCSP

Product Description

The Rochester Electronics FDZ3N513ZT is a MOSFET P-CH 30V 1.1A 4WLCSP. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics FDZ3N513ZT for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.