Name: Rochester Electronics FQB34N20LTM
Brand: Rochester Electronics
SKU: FQB34N20LTM
Price: 1.11000 USD
Availability: InStock

Technical Specifications

Series	QFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3.9 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 180W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The Rochester Electronics FQB34N20LTM is a POWER FIELD-EFFECT TRANSISTOR, 3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics FQB34N20LTM for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.