Name: Rochester Electronics FQD5N60CTM
Brand: Rochester Electronics
SKU: FQD5N60CTM
Price: 0.36000 USD
Availability: InStock

Technical Specifications

Series	QFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 49W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Product Description

The Rochester Electronics FQD5N60CTM is a POWER FIELD-EFFECT TRANSISTOR, 2. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics FQD5N60CTM for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.